onsemi NSS1C200MZ4T3G BJTs - Bipolar Transistors PNP BIP POWER TRAN SOT223

Width: 3.5 mm

Height: 1.57 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 112 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 150

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 140 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 220 mV