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onsemi NSB1706DMW5T1G Digital Transistors 100mA 50V BRT NPN

ModelNSB1706DMW5T1G
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Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Unit Weight: 12 mg

Configuration: Dual Common Emitter

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 187 mW

Typical Input Resistor: 4.7 kOhms

Typical Resistor Ratio: 0.1

DC Current Gain hFE Max: 80

Peak DC Collector Current: 100 mA

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 80, 200

Collector- Emitter Voltage VCEO Max: 50 V

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