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onsemi NJVNJD35N04T4G Darlington Transistors NPN DARLINGTON Pwr TRAN

ModelNJVNJD35N04T4G
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Unit Weight: 260.400 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 45 W

Gain Bandwidth Product fT: 90 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 700 V

Continuous Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 2000

Maximum Collector Cut-off Current: 250 uA

Collector- Emitter Voltage VCEO Max: 350 V

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