onsemi NJVMJD42CT4G BJTs - Bipolar Transistors SILICON Pwr TRANSISTOR

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Technology: Si

Unit Weight: 350 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.75 W

DC Current Gain hFE Max: 30 at 300 mA, 4 V

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 1.5 V