onsemi NJV4030PT1G BJTs - Bipolar Transistors PNP SOT223 BIP PWR TRAN

Technology: Si

Unit Weight: 112 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 400 at 1 A, 1 V

Gain Bandwidth Product fT: 160 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 1 A, 1 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 500 mV