onsemi NGTG12N60TF1G IGBT Transistors 600V 12A IGBT TO-3PF
Manufactureronsemi(View more products from this manufacturer)
ModelNGTG12N60TF1G
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Technology: Si
Unit Weight: 8 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 54 W
Continuous Collector Current: 20 A
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.4 V
Continuous Collector Current at 25 C: 24 A
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