onsemi NGTB30N120L2WG IGBT Transistors 1200V/30A LOW VCE SAT FSII
Manufactureronsemi(View more products from this manufacturer)
ModelNGTB30N120L2WG
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Technology: Si
Unit Weight: 6.500 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 534 W
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 60 A
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