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onsemi NGTB15N135IHRWG IGBT Transistors IGBT 1350V 15A FS2-RC Induction Heating

ModelNGTB15N135IHRWG
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Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 357 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.35 kV

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 30 A

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