onsemi NCV8406BDTRKG MOSFETs 65V, SMARTFET

Fall Time: 692 ns

Rise Time: 486 ns

Technology: Si

Unit Weight: 351 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.31 W

Vgs - Gate-Source Voltage: - 14 V, + 14 V

Typical Turn-On Delay Time: 127 ns

Typical Turn-Off Delay Time: 1600 ns

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 210 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 2 V