onsemi NCV5701CDR2G Half-Bridge HIGH CURRENT IGBT GATE DR

Features: DESAT Protection with Programmable Delay, Separate Outputs for VOL and VOH

Shutdown: Shutdown

Fall Time: 7.9 ns

Rise Time: 9.2 ns

Technology: Si

Configuration: Inverting

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Output Current: 4 A

Output Voltage: 5 V

Number of Drivers: 1 Driver

Number of Outputs: 1 Output

Supply Voltage - Max: 35 V

Supply Voltage - Min: 5.5 V

Pd - Power Dissipation: 700 mW

Propagation Delay - Max: 70 ns

Operating Supply Current: 900 uA

Maximum Turn-On Delay Time: 75 ns

Maximum Turn-Off Delay Time: 75 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C