onsemi NCV57001FDWR2G IGBT, MOSFET Gate Drivers Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation Isolated High Current IGBT Gate Driver
Manufactureronsemi(View more products from this manufacturer)
ModelNCV57001FDWR2G
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Fall Time: 15 ns
Rise Time: 10 ns
Configuration: Inverting, Non-Inverting
Mounting Style: SMD/SMT
Output Current: 4 A
Number of Drivers: 1 Driver
Number of Outputs: 1 Output
Supply Voltage - Max: 5 V
Supply Voltage - Min: 3.3 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
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