onsemi NCD57000DWR2G IGBT, MOSFET Gate Drivers Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation.

Fall Time: 15 ns

Rise Time: 10 ns

Unit Weight: 534.341 mg

Configuration: Inverting, Non-Inverting

Mounting Style: SMD/SMT

Output Current: 6 A

Output Voltage: 24 V

Isolation Voltage: 5000 Vrms

Number of Drivers: 1 Driver

Number of Outputs: 2 Output

Supply Voltage - Max: 5 V

Supply Voltage - Min: 3.3 V

Pd - Power Dissipation: 1.4 W

Propagation Delay - Max: 90 ns

Operating Supply Current: 4.8 mA

Maximum Turn-On Delay Time: 90 ns

Maximum Turn-Off Delay Time: 90 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C