onsemi MUN5115T1 Pre-Biased Bipolar Transistor
Manufactureronsemi(View more products from this manufacturer)
ModelMUN5115T1
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Mounting Type: Surface Mount
Power-Maximum: 202mW
Transistor type: PNP-Prebias
Collector current: 100mA
Resistance-Base (R1): 10kOhms
Vce Saturation (maximum): 250mV@1mA,10mA
Collector-emitter voltage: 50V
DC current gain (hFE) (minimum): 160@5mA,10V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
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