onsemi MSD1819A-RT1G BJTs - Bipolar Transistors 100mA 60V NPN
Manufactureronsemi(View more products from this manufacturer)
ModelMSD1819A-RT1G
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Width: 1.24 mm
Height: 0.85 mm
Length: 2.1 mm
Technology: Si
Unit Weight: 28 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 150 mW
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 210
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 500 mV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts