onsemi MMBT5550LT1G BJTs - Bipolar Transistors SS HV XSTR NPN 160V
Manufactureronsemi(View more products from this manufacturer)
ModelMMBT5550LT1G
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Width: 1.3 mm
Height: 0.94 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 225 mW
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 160 V
Continuous Collector Current: 600 mA
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 140 V
Collector-Emitter Saturation Voltage: 250 mV
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