onsemi MMBT2484LT3G BJTs - Bipolar Transistors SS LN XSTR NPN 60V

Width: 1.3 mm

Height: 0.94 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 225 mW

DC Current Gain hFE Max: 800

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 250

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 350 mV