onsemi MJK32CTWG BJTs - Bipolar Transistors Power Transistor 100 V, 3 A General Purpose PNP PNP Transistor, 100V, 3A

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.7 W

DC Current Gain hFE Max: 60

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: - 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 1.2 V