onsemi MJE5731AG BJTs - Bipolar Transistors BIP PNP 1A 375V

Width: 4.83 mm

Height: 15.75 mm

Length: 10.53 mm

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 40 W

Gain Bandwidth Product fT: 10 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 375 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 375 V

Collector-Emitter Saturation Voltage: 1 V