onsemi MJE210G BJTs - Bipolar Transistors 5A 25V 15W PNP

Width: 2.66 mm

Height: 11.04 mm

Length: 7.74 mm

Technology: Si

Unit Weight: 680 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 15 W

Gain Bandwidth Product fT: 65 MHz

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1.8 V