onsemi MJD45H11-1G BJTs - Bipolar Transistors 8A 80V 20W PNP

Width: 2.38 mm

Height: 6.35 mm

Length: 6.73 mm

Technology: Si

Unit Weight: 350 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 20 W

Gain Bandwidth Product fT: 90 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V