onsemi MJD112T4G Darlington Transistors 2A 100V Bipolar Power NPN
Manufactureronsemi(View more products from this manufacturer)
ModelMJD112T4G
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Width: 6.22 mm
Height: 2.38 mm
Length: 6.73 mm
Unit Weight: 470 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 20 W
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 2 A
Maximum DC Collector Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 200, 500, 1000
Maximum Collector Cut-off Current: 20 uA
Collector- Emitter Voltage VCEO Max: 100 V
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