onsemi MBT3946DW1T1G BJTs - Bipolar Transistors 200mA 40V Dual Complementary

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Technology: Si

Unit Weight: 28 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 150 mW

Gain Bandwidth Product fT: 300 MHz, 250 MHz

Emitter- Base Voltage VEBO: 6 V, 5 V

Collector- Base Voltage VCBO: 60 V, 40 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 300 mV, 400 mV