onsemi HN1B01FDW1T1G BJTs - Bipolar Transistors 200mA 60V Dual Complementary
Manufactureronsemi(View more products from this manufacturer)
ModelHN1B01FDW1T1G
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Width: 1.5 mm
Height: 0.94 mm
Length: 3 mm
Technology: Si
Unit Weight: 13.430 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 380 mW
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 250 mV, 300 mV
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