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onsemi FQPF7N65C_F105 MOSFET

ModelFQPF7N65C_F105
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Vgs(th): 4 V

Vgs (Max): 30V

Gate Charge (Qg): 36nC

Power consumption: 52W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 650V

Continuous drain current: 7A

Input Capacitance (Ciss): 1245pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.4Ohm

Drive Voltage (Max Rds On, Min Rds On): 10V

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