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onsemi FQPF3N90_NL MOSFET

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Vgs(th): 5 V

Vgs (Max): 30V

Gate Charge (Qg): 26nC

Power consumption: 43W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 900V

Continuous drain current: 2.1A

Input Capacitance (Ciss): 910pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 4.25Ohm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet


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