onsemi FGY75T120SWD IGBT Transistors 1200V, 75A Field Stop VII Discrete IGBT in Power TO247-3L Packaging
Manufactureronsemi(View more products from this manufacturer)
ModelFGY75T120SWD
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Technology: Si
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 503 W
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current Ic Max: 150 A
Collector-Emitter Saturation Voltage: 1.68 V
Continuous Collector Current at 25 C: 150 A
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