onsemi FGHL50T65SQ IGBT Transistors FS4TIGBT 50A 650V
Manufactureronsemi(View more products from this manufacturer)
ModelFGHL50T65SQ
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Technology: Si
Unit Weight: 116.667 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 268 W
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 100 A
Collector-Emitter Saturation Voltage: 1.6 V
Continuous Collector Current at 25 C: 100 A
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