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onsemi FGHL40T65MQDT IGBT Transistors FS4 MID SPEED IGBT 650V 40A TO247-3L WITH FULL RATED CURRENT DIODE

ModelFGHL40T65MQDT
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Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 238 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.45 V

Continuous Collector Current at 25 C: 60 A

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