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onsemi FGHL40T120RWD IGBT Transistors 1200V/40A FS7 IGBT SCR TO247

ModelFGHL40T120RWD
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Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 600 W

Operating Temperature Range: - 55 C to + 175 C

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current at 25 C: 80 A

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