onsemi FGH4L40T120LQD IGBT Transistors 1200V 40A FSIII IGBT LOW VCESAT AND FAST FRD
Manufactureronsemi(View more products from this manufacturer)
ModelFGH4L40T120LQD
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Technology: Si
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 306 W
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 80 A
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