onsemi FGD3050G2 IGBT Transistors 500V 27A 1.3V 300mJ
Manufactureronsemi(View more products from this manufacturer)
ModelFGD3050G2
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Technology: Si
Unit Weight: 462.833 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 150 W
Gate-Emitter Leakage Current: 25 uA
Maximum Gate Emitter Voltage: - 10 V, 10 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 500 V
Collector-Emitter Saturation Voltage: 1.1 V
Continuous Collector Current at 25 C: 32 A
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