onsemi FFSD0465A Schottky Silicon Carbide Diodes Silicon Carbide (SiC) Schottky Diode - EliteSiC, 4 A, 650 V, D1, DPAK Silicon Carbide (SiC) Schottky Diode - EliteSiC, 4 A, 650 V, D1, DPAK
Manufactureronsemi(View more products from this manufacturer)
ModelFFSD0465A
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Technology: SiC
Unit Weight: 329.241 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
If - Forward Current: 4 A
Ir - Reverse Current: 200 uA
Vf - Forward Voltage: 1.5 V
Vr - Reverse Voltage: 650 V
Pd - Power Dissipation: 61 W
Ifsm - Forward Surge Current: 38 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Vrrm - Repetitive Reverse Voltage: 650 V
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