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onsemi FDS6688 Trans MOSFET N-CH 30V 16A 8-Pin SOIC N T/R

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Type: Power MOSFET

Vgs(th): 3 V

Vgs (Max): 20V

Gate Charge (Qg): 56nC

Power consumption: 2.5W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 16A

Input Capacitance (Ciss): 3888pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 6mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet


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