onsemi FCPF360N65S3R0L-F154 MOSFETs Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 10 A, 360 mohm, TO-220F Ultra narrow lead

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: Through Hole

Qg - Gate Charge: 18 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 27 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 360 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V