onsemi D45H8G BJTs - Bipolar Transistors 10A 60V 50W PNP

Width: 4.83 mm

Height: 15.75 mm

Length: 10.53 mm

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 70 W

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1 V