onsemi BCP56-10T1G BJTs - Bipolar Transistors 1A 100V NPN

Width: 3.5 mm

Height: 1.57 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

Gain Bandwidth Product fT: 130 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV