onsemi BC847BM3T5G BJTs - Bipolar Transistors 100mA 50V NPN SILCON

Width: 0.8 mm

Height: 0.5 mm

Length: 1.2 mm

Technology: Si

Unit Weight: 1.200 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 600 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 600 mV