onsemi AFGY160T65SPD-B4 IGBT Transistors FS3 TO247 160A 650V AUTOMOTIVE TRACTION WITH BINNING
Manufactureronsemi(View more products from this manufacturer)
ModelAFGY160T65SPD-B4
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Technology: Si
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 882 W
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.6 V
Continuous Collector Current at 25 C: 240 A
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