onsemi AFGY100T65SPD IGBT Transistors IGBT - 650 V 100 A FS3 for EV traction inverter application IGBT - 650 V 100 A FS3
Manufactureronsemi(View more products from this manufacturer)
ModelAFGY100T65SPD
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Technology: Si
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 660 W
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.6 V
Continuous Collector Current at 25 C: 120 A
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