onsemi AFGHL75T65SQDC IGBT Transistors IGBT with SiC copack diode IGBT - Hybrid IGBT 650 V
Manufactureronsemi(View more products from this manufacturer)
ModelAFGHL75T65SQDC
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Technology: SiC
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 375 W
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 80 A
Collector-Emitter Saturation Voltage: 1.6 V
Continuous Collector Current at 25 C: 80 A
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