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onsemi AFGHL50T65SQD IGBT Transistors AEC 101 Qualified, 650V, 50A Fieldstop 4 trench IGBT

ModelAFGHL50T65SQD
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Technology: Si

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Pd - Power Dissipation: 268 W

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 80 A

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