onsemi AFGH4L40T120RWD-STD IGBT Transistors FS7 1200V 40A SCR IGBT TO247 4L COPACK (LOW COST)
Manufactureronsemi(View more products from this manufacturer)
ModelAFGH4L40T120RWD-STD
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 416 W
Gate-Emitter Leakage Current: +/- 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2 V
Continuous Collector Current at 25 C: 80 A
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