onsemi AFGB40T65SQDN IGBT Transistors 650V/40A FS4 IGBT
Manufactureronsemi(View more products from this manufacturer)
ModelAFGB40T65SQDN
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 2.067 g
REACH - SVHC: Details
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Pd - Power Dissipation: 238 W
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Continuous Collector Current Ic Max: 40 A
Collector-Emitter Saturation Voltage: 1.6 V
Continuous Collector Current at 25 C: 80 A
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts