onsemi AFGB30T65SQDN IGBT Transistors IGBT 650V FS4 High speed version for OBC application in D2PAK 650V, 30A, D2PAK
Manufactureronsemi(View more products from this manufacturer)
ModelAFGB30T65SQDN
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Technology: Si
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Pd - Power Dissipation: 220 W
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.6 V
Continuous Collector Current at 25 C: 60 A
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