onsemi 55GN01CA-TB-E RF Bipolar Power SWITCHING DEVICE

Width: 1.5 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 11.780 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Power

Operating Frequency: 5.5 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 180

Gain Bandwidth Product fT: 4.5 GHz

Emitter- Base Voltage VEBO: 3 V

Operating Temperature Range: + 25 C to + 150 C

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: 5 mA

Maximum DC Collector Current: 70 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: + 25 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 10 V