onsemi 30C02MH-TL-E BJTs - Bipolar Transistors BIP NPN 0.7A 30V
Manufactureronsemi(View more products from this manufacturer)
Model30C02MH-TL-E
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Technology: Si
Unit Weight: 7.240 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 600 mW
Gain Bandwidth Product fT: 540 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Continuous Collector Current: 700 mA
Maximum DC Collector Current: 700 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 300
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 85 mV
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