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onsemi 30A02MH-TL-E BJTs - Bipolar Transistors BIP PNP 0.7A 30V

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Technology: Si

Unit Weight: 7.240 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 600 mW

Gain Bandwidth Product fT: 520 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Maximum DC Collector Current: 700 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 110 mV

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