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Technology: Si
Unit Weight: 40 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 200 mW
Gate-Source Cutoff Voltage: - 700 mV
Maximum Drain Gate Voltage: - 15 V
Id - Continuous Drain Current: 50 mA
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 35 mS
Vgs - Gate-Source Breakdown Voltage: - 15 V
Vds - Drain-Source Breakdown Voltage: 15 V
