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onsemi 2SD1628F-TD-E BJTs - Bipolar Transistors BIP NPN 5A 20V

Model2SD1628F-TD-E
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Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 500 mV

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