onsemi 2SD1048-7-TB-E BJTs - Bipolar Transistors BIP NPN 0.7A 15V
Manufactureronsemi(View more products from this manufacturer)
Model2SD1048-7-TB-E
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Technology: Si
Unit Weight: 11.650 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 900
Gain Bandwidth Product fT: 250 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 700 mA
Maximum DC Collector Current: 700 mA
Maximum Operating Temperature: + 125 C
DC Collector/Base Gain hfe Min: 200
Collector- Emitter Voltage VCEO Max: 15 V
Collector-Emitter Saturation Voltage: 30 mV
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